2sC5252 silicon npn triple diffused planar ade-208-391a (z) 2nd. edition application character display horizontal deflection output features high breakdown voltage v cbo = 1500 v high speed switching t f 0.15 sec(typ.) isolated package toC3p?fm outline 1. base 2. collector 3. emitter to-3pfm 1 2 3
2sC5252 2 absolute maximum ratings (ta = 25c) item symbol ratings unit collector to base voltage v cbo 1500 v collector to emitter voltage v ceo 800 v emitter to base voltage v ebo 6v collector current i c 15 a collector peak current i c(peak) 30 a collector power dissipation p c * 1 50 w junction temperature tj 150 c storage temperature tstg C55 to +150 c note: 1. t c = 25c electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to emitter breakdown voltage v (br)ceo 800 v i c = 10 ma, r be = emitter to base breakdown voltage v (br)ebo 6vi e = 10 ma, i c = 0 collector cutoff current i ces 500 a v ce = 1500 v, r be = 0 dc current transfer ratio h fe1 835 v ce = 5 v, i c = 1 a dc current transfer ratio h fe2 36 v ce = 5 v, i c = 8 a collector to emitter saturation voltage v ce(sat) 5vi c = 10 a, i b = 3 a base to emitter saturation voltage v be(sat) 1.5 v i c = 10 a, ib = 3 a fall time t f 0.15 0.3 sec i cp = 7 a, i b1 = 2 a, f h = 31.5 khz
2sC5252 3 80 60 40 20 0 collector power dissipation pc (w) 50 100 150 200 case temperature tc ( c) collector power dissipation vs. case temperature 50 40 30 20 10 0 collector current i (a) 2000 collector to emitter voltage v (v) ce c areaof safe operaion 400 800 1200 1600 (400 v, 30 a) (600 v, 8 a) (800 v, 4 a) (1500 v, 0.5 ma) i = ? a l = 180 h duty < 1 % tc = 25 c b1
2sC5252 4 0 510 collector to emitter voltage v (v) ce collector current i (a) c 5 10 i = 0 b typical output characteristics 2.0 a 1.8 a 1.6 a 1.4 a 1.2 a 1.0 a 0.8 a 0.6 a 0.4 a 0.2 a tc = 25 c pulse test 0.1 0.2 0.5 1 2 5 10 1 5 2 10 20 50 100 dc current transfer ratio h fe collector current i (a) c 20 dc current transfer ratio vs. collector current v = 5 v pulse test ce 25 c 75 c tc = ?5 c
2sC5252 5 0.1 0.2 0.5 1 2 5 20 0.05 collector to emitter saturation voltage ce(sat) v (v) collector current i (a) c 10 collector to emitter saturation voltage vs. collector current 10 2 5 1 0.2 0.5 0.1 tc = ?5 c 25 c 75 c i / i = 3 pulse test c b 0.1 0.2 0.5 1 2 5 10 0.1 0.5 0.2 1 2 5 10 collector current i (a) c 20 base to emitter saturation voltage v (v) be(sat) base to emitter saturation voltage vs. collector current tc = ?5 c 25 c 75 c i / i = 3 pulse test c b
2sC5252 6 10 8 6 4 2 0 0.1 0.2 0.5 1 2 5 10 base current i (a) b collector to emitter saturation voltage v (v) ce(sat) collector to emitter saturation voltage vs. base current 8 a 10 a 12 a i = 6 a c tc = 25 c pulse test 1.0 0.8 0.6 0.4 0.2 0.8 1.6 2.4 3.2 4.0 0 fall time t ( s) f icp = 7 a f = 31.5 khz tc = 25 c h base current i (a) b1 fall time vs. base current
2sC5252 7 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd. semiconductor & ic div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 for further information write to: hitachi america, ltd. semiconductor & ic div. 2000 sierra point parkway brisbane, ca. 94005-1835 u s a tel: 415-589-8300 fax: 415-583-4207 hitachi europe gmbh electronic components group continental europe dornacher stra? 3 d-85622 feldkirchen m?nchen tel: 089-9 91 80-0 fax: 089-9 29 30 00 hitachi europe ltd. electronic components div. northern europe headquarters whitebrook park lower cookham road maidenhead berkshire sl6 8ya united kingdom tel: 0628-585000 fax: 0628-778322 hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 0104 tel: 535-2100 fax: 535-1533 hitachi asia (hong kong) ltd. unit 706, north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel: 27359218 fax: 27306071
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